Si etching by Ar/Cl2 plasma and comparison with FPSM2D

Computational conditions

  • The width,thickness of resist and thickness of Si substrate are 0.3[um],0.4[um] and 2[um],respectively in FPSM2D.
  • The diameter of hole is 0.4[um] in hole etching by FPSM3D(1/2 model to z direction).
  • The width and length of trench are 0.4[um] and 0.2[um], respectively in trench etching by FPSM3D(1/2 model to z direction). the thickness of resist and SI substrate are same as above.
  • The reflection model of incident ions on the resist depend on the incident angle and energy. But no physical and chemical reactions between radicals,ions and the resist are assumed.
  • The 17 kinds of physical/chemical reactions including ion assist etching between Si substrate and incident particles are considered.
  • Ion and radical information, number of reactive kinds ans reaction probabilities are same in all simulations.

Result

  • FPSM2D initial profile

    FPSM2D initial profile

  • FPSM2D result at 900[s]. The etch rate is about 90[nm/min]

    FPSM2D result at 900[s]. The etch rate is about 90[nm/min]

  • FPSM3D hole initail profile

    FPSM3D hole initail profile

  • FPSM3D hole at 300[s]

    FPSM3D hole at 300[s]

  • FPSM3D hole at 900[s]

    FPSM3D hole at 900[s]

  • FPSM3D trench initial profile

    FPSM3D trench initial profile

  • FPSM3D trench at 300[s]

    FPSM3D trench at 300[s]

  • FPSM3D trench at 900[s]

    FPSM3D trench at 900[s]