Unbalanced magnetron sputtering system

Planar magnetron sputtering sysmte

Coaxial cylinder magnetron

Analysis of a Magnetron Sputtering Equipment

DC magnetron sputtering equipment (1)

DC magnetron sputtering equipment (2)

3D calculation of a magnetron sputtering equipment

Self-ionized sputtering

Plasma parameter analysis in a RF magnetron sputtering equipment

Sputtering particle transfer in a DC magnetron sputtering equipment

Magnetic field analysis in a magnetron sputtering device

It is a calculation of a magnetic field generated by current coils.

3D CCP plasma

A calculation example of the Capacity Coupled Plasma by PIC-MCCM 3D.

Validation (1) in CCP/GEC reactor.

Validation (2) in CCP/GEC reactor

Plasma calculation in a GEC Reference Cell type device

PIC-MCCM and DSMCM coupling calculation

Cl2 ICP/Etching reactor

SF6 ICP /Etching reactor

It is an analysis example of the SF6 gas. Density distributions for many kinds of radical molecules to be formed in a device, ions and electronic are evaluated distribution in a self-consistent manner. It is a coupling calculation of PHM and DSMCM.

C2H2 ICP/CVD reactor

Rarefied gas flow analysis in a CVD equipment with shower head structure

It is the gas flow simulation in two plasma cvd devices with shower head structure. Gas pressure distributions, flow velocity distribution and uniformity for the gas pressure on the surface of substrates are evaluated.

C2H2 ICP/CVD reactor

Comparison experiment and simulation for film thickness in vacuum evaporation equipment

Verification of vacuum evaporation film thickness distribution

Rarefied gas flow analysis in a CVD equipment with shower head structure

It is the gas flow simulation in two plasma cvd devices with shower head structure. Gas pressure distributions, flow velocity distribution and uniformity for the gas pressure on the surface of substrates are evaluated.

Mixed gas simulation

Verification of Clausing's factor

Multi layer film PVD

Deposition and sputtering

SiO2 etching by Fluorocarbon plasma

Comparison of profile with solid SiO2 and porous SiO2

Si etching by Bosch process

Etching process time(SF6)/Passivation process time(C4F8)= 8[s] / 8[s]

Si etching by Ar/Cl2 plasma and comparison with FPSM2D

Discharge in a PDP cell

This is a calculation for micro scale plasma in a PDP cell.

Ion beam path calculation

Benard flow

A flow in a plane horizontal layer of fluid heated from below.

Crossing flow of vertical board

Taylor-Couette flow

A flow in the gap between two rotating cylinders.

Flow field of wing edge

Magnetic field analysis in a device having magnetic field coils

Orion atmospheric reentry simulation

It is an analysis example of the flow of the high Mach number with using RGS3D.

Ar/Cl2 mixture gas flow

Flow around square cylinder

A calculation example of NMEM. Karman vortexes are appeared.

Flow field (Specular reflection)

Flow field (diffuse reflection)

SASAMAL calculation example

SMCSM calculation example